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r09ds0037ej0100 rev.1.00 page 1 of 9 apr 18, 2012 data sheet nesg7030m04 npn silicon germanium carbon rf transistor features ? the device is an ideal choice for low noise, high gain amplification. nf = 0.75 db typ. @ v ce = 2 v, i c = 5 ma, f = 5.8 ghz g a = 14 db typ. @ v ce = 2 v, i c = 5 ma, f = 5.8 ghz ? p o (1 db) = 4.5 dbm typ. @ v ce = 2 v, i c (set) = 10 ma, f = 2 ghz ? maximum stable power gain: msg =16.5 db typ. @ v ce = 2 v, i c = 15 ma, f = 5.8 ghz ? sige: c hbt technology ? this product is improvement of esd. ? flat-lead 4-pin thin-type super minimold (m04 pkg) outline 1. emitter 2. collector 3. emitter 4. base note : marking is "t1r." renesas package code : m04 (package name : flat-lead 4-pin thin-type super minimold (m04 pkg)) 1 2 4 3 ordering information part number order number package quantity supplying form nesg7030m04 nesg7030m04-a 50 pcs (non reel) nesg7030m04-t2 nesg7030m04-t2-a 3 kpcs/reel nesg7030m04-t2b NESG7030M04-T2B-A flat-lead 4-pin thin- type super minimold (m04 pkg) (pb-free) 15kpcs/reel ? 8 mm wide embossed taping ? pin 1(emitter), pin 2 (collector) face the perforation side of the tape remark to order evaluation samples, please contact your nearby sales office. unit sample quantity is 50 pcs. caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0037ej0100 rev.1.00 apr 18, 2012
nesg7030m04 r09ds0037ej0100 rev.1.00 page 2 of 9 apr 18, 2012 absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 10 v collector to emitter voltage v ceo 4.3 v base current i b note1 2 ma collector current i c 30 ma total power dissipation p tot note2 125 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c notes: 1. depend on the esd protect device. 2. mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pwb electrical characteristics (t a = +25 c) parameter symbol test condi tions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 4.3 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 0.4 v, i c = 0 ? ? 100 na dc current gain h fe note 1 v ce = 2 v, i c = 5 ma 200 320 500 ? rf characteristics reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0, f = 1 mhz ? 50 80 ff insertion power gain ? s 21e ? 2 v ce = 2 v, i c = 15 ma, f = 5.8 ghz 11.0 13.0 ? db maximum stable power gain msg note 3 v ce = 2 v, i c = 15 ma, f = 5.8 ghz ? 16.5 ? db noise figure (1) nf1 v ce = 2 v, i c = 5 ma, f = 2 ghz, z s = z sopt , z l = z lopt ? 0. 5 ? db associated gain (1) g a1 v ce = 2 v, i c = 5 ma, f = 2 ghz, z s = z sopt , z l = z lopt ? 21.0 ? db noise figure (2) nf2 v ce = 2 v, i c = 5 ma, f = 5.8 ghz, z s = z sopt , z l = z lopt ? 0.75 1.15 db associated gain (2) g a2 v ce = 2 v, i c = 5 ma, f = 5.8 ghz, z s = z sopt , z l = z lopt 12.0 14.0 ? db gain 1 db compression output power p o (1 db) v ce = 2 v, i c (set) = 10 ma, f = 2 ghz, z s = z sopt , z l = z lopt ? 4.5 ? dbm notes: 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded. 3. msg = h fe classification rank yfb marking t1r h fe value 200 to 500 s 21 s 12
nesg7030m04 r09ds0037ej0100 rev.1.00 page 3 of 9 apr 18, 2012 typical characteristics (t a = +25 c, unless otherwise specified) 80 30 20 10 50 60 70 40 f = 1 mhz 10 1 0.01 0.001 0.1 0.0001 0.6 0.4 0.8 1.0 100 v ce = 2.0 v reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage base to emitter voltage v be (v) collector current i c (ma) collector current vs. base to emitter voltage 0 1 2 3 4 5 250 100 125 200 150 0 0 25 50 75 100 125 150 total power dissipation p tot (mw) total power dissipation vs. ambient temperature mounted on glass eploxy pwb (1.08 cm 2 1.0 mm (t) ) ambient temperature t a ( c) 50 90 100 0 15 0 5 10 02 135 4 collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage 40 a 36 a 32 a 28 a 24 a 20 a 16 a 12 a 8 a i b = 4 a v ce = 2.0 v 1 000 100 10 10 0.1 1 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current remark the graph indicates nominal characteristics.
nesg7030m04 r09ds0037ej0100 rev.1.00 page 4 of 9 apr 18, 2012 40 35 30 25 20 15 10 5 0 1 10 100 v ce = 1 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 40 35 30 25 20 15 10 5 0 1 10 100 v ce = 2 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 40 35 30 25 20 15 10 5 0 1 10 100 v ce = 3 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 40 30 25 20 15 10 5 0 35 v ce = 1 v i c = 5 ma 10 0.1 1 100 |s 21e | 2 msg frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) mag msg 40 30 25 20 15 10 5 0 35 v ce = 2 v i c = 5 ma 10 0.1 1 100 |s 21e | 2 msg frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) mag msg 40 30 25 20 15 10 5 0 35 v ce = 3 v i c = 5 ma 10 0.1 1 100 |s 21e | 2 msg frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) mag msg remark the graph indicates nominal characteristics.
nesg7030m04 r09ds0037ej0100 rev.1.00 page 5 of 9 apr 18, 2012 40 30 25 20 15 10 5 0 35 v ce = 1 v i c = 15 ma 10 0.1 1 100 |s 21e | 2 mag frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) mag msg msg 40 30 25 20 15 10 5 0 35 v ce = 2 v i c = 15 ma 10 0.1 1 100 |s 21e | 2 msg frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) msg 40 30 25 20 15 10 5 0 35 v ce = 3 v i c = 15 ma 10 0.1 1 100 |s 21e | 2 msg frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) mag msg mag remark the graph indicates nominal characteristics.
nesg7030m04 r09ds0037ej0100 rev.1.00 page 6 of 9 apr 18, 2012 collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) 1 30 0 10 15 20 10 100 25 5 v ce = 2 v, f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) 1 30 0 10 15 20 10 100 25 5 v ce = 3 v, f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) msg mag 1 0 10 15 20 10 100 25 5 v ce = 1 v, f = 5.8 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available gain mag (db) 1 0 10 15 20 10 100 25 5 v ce = 3 v, f = 5.8 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available gain mag (db) maximum stable gain msg (db) msg mag |s 21e | mag 1 0 10 15 20 10 100 25 5 v ce = 2 v, f = 5.8 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available gain mag (db) |s 21e | 2 mag msg mag |s 21e | 2 1 30 0 10 15 20 10 100 25 5 v ce = 1 v, f = 2 ghz |s 21e | 2 |s 21e | 2 |s 21e | 2 msg mag remark the graph indicates nominal characteristics.
nesg7030m04 r09ds0037ej0100 rev.1.00 page 7 of 9 apr 18, 2012 v ce = 2 v, f = 2 ghz, z s = z sopt , z l = z lopt g a 1 0 1 2 3 10 100 30 0 5 15 25 ?20 ?15 ?25 ?35 ?10 p out i c 10 15 ?30 20 10 v ce = 2 v, f = 5.8 ghz, z s = z sopt , z l = z lopt g a 1 0 1 2 3 10 100 18 0 3 9 15 12 6 collector current i c (ma) noise figure nf (db) noise figure, associated gain vs. collector current associated gain g a (db) 40 50 0 10 30 20 v ce = 2 v, i c (set) = 10 ma, f = 2 ghz nf nf collector current i c (ma) noise figure nf (db) noise figure, associated gain vs. collector current ?10 ?5 5 0 input power p in (dbm) output power p out (dbm) output power, collector current vs. input power associated gain g a (db) collector current i c (ma) ?5 ?0 ?10 ?20 5 p out i c 10 15 ?15 40 50 0 10 30 20 v ce = 2 v, i c (set) = 10 ma, f = 5.8 ghz ?10 ?5 5 0 input power p in (dbm) output power p out (dbm) output power, collector current vs. input power collector current i c (ma) remark the graph indicates nominal characteristics.
nesg7030m04 r09ds0037ej0100 rev.1.00 page 8 of 9 apr 18, 2012 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import to microwave circuit simulators without keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/download/parameter/
nesg7030m04 r09ds0037ej0100 rev.1.00 page 9 of 9 apr 18, 2012 package dimensions flat-lead 4-pin thin-type super mi nimold (m04 pkg) (unit: mm) pin connections 1. emitter 2. collector 3. emitter 4. base 0.590.05 0.11 +0.1 ?0.05 (bottom view) 43 12 1.25 2.00.1 1.30 (1.05) 0.60 0.65 0.65 0.65 1.30 1.25 2.00.1 12 43 1.250.1 2.050.1 0.30 +0.1 ?0.05 0.40 +0.1 ?0.05 0.30 +0.1 ?0.05 0.30 +0.1 ?0.05
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history nesg7030m04 data sheet description rev. date page summary 1.00 apr 18, 2012 ? first edition issued
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